![]() International Conference on Enabling Science and Nanotechnology (ESciNano), Kuala Lumpur (1–3 Dec. Jumidali MM, Hashim MR, Sulieman KM (2010) Germanium catalyzed amorphous silicon dioxide nanowire synthesized via thermal evaporation method. (2016) Germanium-catalyzed growth of single-crystal GaN nanowires. (2013) Formation of Germanium Nitride Nanowires on the Surface of Crystalline Germanium. Jishiashvili D, Kiria L, Shiolashvili Z, et al. (2015) Vapor-Solid growth of InP and Ga 2O 3 based composite nanowires. Jishiashvili D, Shiolashvili Z, Makhatadze N, et al. ![]() Res Appl Mech Eng 3: 21–25.ĭirtu D, Odochian L, Pui A, et al. Pakdehi S, Salim M, Rasoolzadeh M (2014) A Review on Decomposition of Hydrazine and Its Kinetics as a Novel Approach for CO-Free H 2 Production. (2013) Kinetic parameters for thermal decomposition of hydrazine. Santos LB, Ribeiro CA, Capela JMV, et al. Rzhanov AV (1982) Silicon nitride in electronics. Vashioka S, Tokaynagi S (1967) Deposition of silicon nitride films by the silicon hydrazine process. Pan ZW, Dai ZR, Wang ZL (2001) Nanobelts of semiconducting oxides. Kirkham M, Wang ZL, Snyder RL (2008) In situ growth kinetics of ZnO nanobelts. (2004) Single-Crystal Nanorings Formed by Epitaxial Self-Coiling of Polar Nanobelts. (2010) Ultrahigh-Performance Solar-Blind Photodetectors Based on Individual Single-crystalline In 2Ge 2O 7 Nanobelts. (2012) Synthesis of In 2-xGe xO 3 nanopowders for thermoelectric applications. Gonkalves AP, Godart C (2014) New promising bulk thermoelectrics: intermetallics, pnictides and chalcogenides. (2014) Enhanced H 2S gas-sensing properties of Pt- functionalized In 2Ge 20 7 nanowires. (2011) Temperature-controlled synthesis of In 2Ge 2O 7 nanowires and their photoluminescence properties. (2012) Synthesis of highly crystalline In 2Ge 2O 7 (En) hybrid sub-nanowireswith ultraviolet photoluminescence emissions and their selective photocatalytic reductionof CO 2into renewable fuel. ![]() doi: 10.1016/j.ssc.2007.12.033Ĭhen D, Zhang X, Lee AF (2015) Synthetic strategies to nanostructured photocatalysts for CO 2 reduction to solar fuels and chemicals. (2008) In 2O 3:Ge, a promising n-type thermoelectric oxide composite. (2009) A Comprehensive Review of One-Dimensional Metal-Oxide Nanostructure Photodetectors. (2013) Solar-Blind Photodetectors for Harsh Electronics. Sang L, Liao M, Sumiya M (2013) A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures. Liao M, Koide Y, Sang L (2014) Nanostructured Wide-bandgap Semiconductors for Ultraviolet Detection. Tian W, Lu H, Li L (2015) Nanoscale ultraviolet photodetectors based on one-dimensional metal oxide nanostructures. Development of low temperature technology for the growth of wide band gap semiconductor nanowires. The results of this work clearly demonstrate the ability of hydrazine vapor to reduce the growth temperature of nitride and oxide nanomaterials.Ĭitation: David Jishiashvili, Zeinab Shiolashvili, Archil Chirakadze, Alexander Jishiashvili, Nino Makhatadze, Kakha Gorgadze. The growth temperatures of both, In 2Ge 2O 7 and InN nanostructures were by 50–150 ✬ lower than that, reported in the literature. The possible chemical reactions for the synthesis of these nanostructures were evaluated. At 420–440 ✬ the mixture of In 2O 3 and Ge nanowires were synthesized, while at 450 ✬ In 2Ge 2O 7 nanowires were produced, with InN nanocrystals growing on their stems. Using In+Ge source the tapered In 2O 3 nanowires were formed on the Si substrate at 400 ✬. The growth temperature of Ge 3N 4 nanowires in hydrazine vapor was by 350 ✬ lower than the temperature reported in the literature. After interacting with hydrazine decomposition products (NH 3, NH 2, NH, H 2, H) and water, Ge 3N 4 nanowires and nanobelts were produced on the Ge source in the temperature range of 500–520 ✬. These molecules were transferred to the Si substrate, which was placed in the could zone of a reactor. Annealing of germanium or Ge+In sources in the vapor of N 2H 4+3 mol.% H 2O caused the formation of volatile GeO and In 2O molecules in the hot zone. In 2Ge 2O 7, Ge 3N 4, In 2O 3 and germanium nanowires were synthesized by the developed hydrazine (N 2H 4)-based technology.
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